1.The emitter of a transistor is generally doped the heaviest because it
a) has to dissipate maximum power
b) has to supply the charge carriers
c) is the first region of the transistor
d) must posses low resistance
ans: b
2. An emitter is a bipolar junction transistor is doped much more heavily than the base as it increases the
a) emitter efficiency
b) Base transport factor
c) forward current gain
d) all the above
ans: d
3. The impurity commonly used for realizing the base region of a silicon n-p-n transistor is
a) Gallium
b) indium
c) Boron
d) Phosphorus
ans: c
4. In a properly biased N-P-N transistor , most of the electrons from the emitter
a) pass to the collector through the base
b) recombine with holes in the base
c) recombine with holes in emitter itself
d) are stopped by the function better
ans: a
5. For an npn bipolar transistor, what is the main stream of current in the base region ?
a) Drift of holes
b) Diffusion of holes
c) Drift of electrons
d) Diffusion of electrons
ans: d
6. The DC current gain of BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
a) 0.980
b) 0.985
c) 0.990
d) 0.995
ans: b
7. If for a silicon npn transistors , the base-to-emitter voltage is 0.7 V and the collector-to-base Voltage is 0.2 V , then the transistor is operating in the
a) normal active mode
b) saturation mode
c) inverse active mode
d) cutoff mode
ans: a
8. Ebers-model of a transistor represents two diodes
a) in series
b) in parallel
c) back-to-back
d) none of the above
ans: c
9. In a transistor , the reverse saturation current Ico
a) doubles for every 10 deg/C rise in temperature
b) doubles for every 1 deg/C rise in temperature
c) increases linearly with temperature
d) decreases linearly with temperature
ans: a
10. The phenomenon known as "Early Effect" in a bipolar transistor refers to a reduction of the effective base-width caused by
a) electron hole recombination at the time
b) the reverse biasing of the base-collector junction
c) the forward biasing of emitter-base junction
d) the early removal of stored base charge during saturation-to-cutoff switching
ans: b
a) has to dissipate maximum power
b) has to supply the charge carriers
c) is the first region of the transistor
d) must posses low resistance
ans: b
2. An emitter is a bipolar junction transistor is doped much more heavily than the base as it increases the
a) emitter efficiency
b) Base transport factor
c) forward current gain
d) all the above
ans: d
3. The impurity commonly used for realizing the base region of a silicon n-p-n transistor is
a) Gallium
b) indium
c) Boron
d) Phosphorus
ans: c
4. In a properly biased N-P-N transistor , most of the electrons from the emitter
a) pass to the collector through the base
b) recombine with holes in the base
c) recombine with holes in emitter itself
d) are stopped by the function better
ans: a
5. For an npn bipolar transistor, what is the main stream of current in the base region ?
a) Drift of holes
b) Diffusion of holes
c) Drift of electrons
d) Diffusion of electrons
ans: d
6. The DC current gain of BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
a) 0.980
b) 0.985
c) 0.990
d) 0.995
ans: b
7. If for a silicon npn transistors , the base-to-emitter voltage is 0.7 V and the collector-to-base Voltage is 0.2 V , then the transistor is operating in the
a) normal active mode
b) saturation mode
c) inverse active mode
d) cutoff mode
ans: a
8. Ebers-model of a transistor represents two diodes
a) in series
b) in parallel
c) back-to-back
d) none of the above
ans: c
9. In a transistor , the reverse saturation current Ico
a) doubles for every 10 deg/C rise in temperature
b) doubles for every 1 deg/C rise in temperature
c) increases linearly with temperature
d) decreases linearly with temperature
ans: a
10. The phenomenon known as "Early Effect" in a bipolar transistor refers to a reduction of the effective base-width caused by
a) electron hole recombination at the time
b) the reverse biasing of the base-collector junction
c) the forward biasing of emitter-base junction
d) the early removal of stored base charge during saturation-to-cutoff switching
ans: b
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